BLF6G27-45_15 Datasheet, PDF (6/17 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

NXP Semiconductors
BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.4 Continuous wave
20
G_p
(dB)
16
12
001aah410 ₆₀
G_p
η_D
(%)
40
η_D
20
20
G_p
(dB)
16
12
001aah411
(1)
(2)
(3)
(4)
(5)
8
0
1
10
10²
P_L (W)
I_Dq = 350 mA; f = 2600 MHz; T_case = 25 C; V_DS = 28 V.
Fig 5. Power gain and drain efficiency as functions
of CW load power; typical values
(6)
8
1
10
10²
P_L(CW) (W)
I_Dq = 350 mA; f = 2600 MHz; T_case = 25 C.
(1) V_DS = 32 V
(2) V_DS = 28 V
(3) V_DS = 24 V
(4) V_DS = 20 V
(5) V_DS = 16 V
(6) V_DS = 12 V
Fig 6. Power gain as function of CW load power;
typical values
BLF6G27-45_BLF6G27S-45
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 7 March 2013
© NXP B.V. 2013. All rights reserved.
6 of 17