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| BFU730F_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
80
CCBS
(fF)
60
40
20
001aam855
60
fT
(GHz)
40
20
001aam856
0
0
1
2
3
4
VCB (V)
Fig 4.
f = 1 MHz, Tamb = 25 °C.
Collector-base capacitance as a function of
collector-base voltage; typical values
30
G
(dB)
20
MSG
0
0
10
20
30
40
50
IC (mA)
Fig 5.
VCE = 2 V; f = 2 GHz; Tamb = 25 °C.
Transition frequency as a function of collector
current; typical values
001aam857
(1)
(2)
(3)
Gp(max)
(4)
10
(5)
0
0
10
20
30
VCE = 2 V; Tamb = 25 °C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6. Gain as a function of collector current; typical value
40
50
IC (mA)
BFU730F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 29 April 2011
© NXP B.V. 2011. All rights reserved.
6 of 12
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