BFU725F_11 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
160
C_CBS
(fF)
120
80
40
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60
f_T
(GHz)
40
20
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0
0
4
8
12
V_CB (V)
Fig 4.
f = 1 MHz, T_amb = 25 C.
Collector-base capacitance as a function of
collector-base voltage; typical values
10²
0
0
10
20
30
40
I_C (mA)
Fig 5.
V_CE = 2 V; f = 2 GHz; T_amb = 25 C.
Transition frequency as a function of collector
current; typical values
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G
(dB)
10
(1)
(2)
(3)
MSG
MSG
G_max ⁽⁴⁾
(5)
G_max
1
10^−1
1
10
10²
I_C (mA)
V_CE = 2 V; T_amb = 25 C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6. Gain as a function of collector current; typical value
BFU725F_N1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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