BFQ135 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN 6.5 GHz wideband transistor

Philips Semiconductors
NPN 6.5 GHz wideband transistor
Product specification
BFQ135
–30
d _im
(dB)
–40
–50
–60
–70
–80
50
MEA954
150
I _C (mA)
250
V_CE = 18 V.
Fig.5 Intermodulation distortion as a function of
collector current; typical values.
–40
d2
(dB)
–60
MEA956
–80
0
100
I _C (mA)
200
V_CE = 18 V; V_O = 50 dBmV; T_amb = 25 °C;
measured at f_p + f_q = 450 MHz.
Fig.6 Second order intermodulation distortion as a
function of collector current; typical values.
–40
d2
(dB)
–60
MEA955
–80
0
100
I _C (mA)
200
V_CE = 18 V; V_O = 50 dBmV; T_amb = 25 °C;
measured at f_p + f_q = 810 MHz.
Fig.7 Second order intermodulation distortion as a
function of collector current; typical values.
1997 Nov 07
6