BFG505 Datasheet, PDF (6/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
25
handbook, halfpage
gain
(dB)
20
MSG
15
GUM
10
MRA643
Gmax
5
0
0
4
8
12
IC (mA)
V_CE = 6 V; f = 2 GHz.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.7 Gain as a function of collector current.
handbook,⁵h⁰alfpage
gain
GUM
(dB)
40
MRA644
30
MSG
20
10
0
10
10²
10³
10⁴
f (MHz)
V_CE = 6 V; I_C = 1.25 mA.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.8 Gain as a function of frequency.
50
handbook, halfpage
gain
GUM
(dB)
40
MSG
30
MRA645
20
Gmax
10
0
10
10²
10³
10⁴
f (MHz)
V_CE = 6 V; I_C = 5 mA.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.9 Gain as a function of frequency.
1998 Oct 02
5
handbook, halfpage
Fmin
(dB)
4
3
MRA650
20
f = 900 MHz ^Gass
(dB)
15
1000 MHz
Gass
2000 MHz
10
2
2000 MHz
5
1000 MHz
Fmin
900 MHz
1
500 MHz
0
0
10^−1
−5
1
IC (mA)
10
V_CE = 6 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
6