74AUP1G86 Datasheet, PDF (6/17 Pages) NXP Semiconductors – Low-power 2-input EXCLUSIVE-OR gate

Philips Semiconductors
74AUP1G86
Low-power 2-input EXCLUSIVE-OR gate
Table 7: Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
T_amb = −40 °C to +85 °C
V_IH
HIGH-state input voltage
V_CC = 0.8 V
V_CC = 0.9 V to 1.95 V
0.70 × V_CC -
0.65 × V_CC -
V_CC = 2.3 V to 2.7 V
1.6
-
V_CC = 3.0 V to 3.6 V
2.0
-
V_IL
LOW-state input voltage V_CC = 0.8 V
-
-
V_CC = 0.9 V to 1.95 V
-
-
V_CC = 2.3 V to 2.7 V
V_CC = 3.0 V to 3.6 V
-
-
-
-
V_OH
HIGH-state output voltage V_I = V_IH or V_IL
I_O = −20 µA; V_CC = 0.8 V to 3.6 V
I_O = −1.1 mA; V_CC = 1.1 V
I_O = −1.7 mA; V_CC = 1.4 V
I_O = −1.9 mA; V_CC = 1.65 V
I_O = −2.3 mA; V_CC = 2.3 V
I_O = −3.1 mA; V_CC = 2.3 V
I_O = −2.7 mA; V_CC = 3.0 V
I_O = −4.0 mA; V_CC = 3.0 V
V_CC − 0.1 -
0.7 × V_CC -
1.03
-
1.30
-
1.97
-
1.85
-
2.67
-
2.55
-
V_OL
LOW-state output voltage V_I = V_IH or V_IL
I_O = 20 µA; V_CC = 0.8 V to 3.6 V
-
-
I_O = 1.1 mA; V_CC = 1.1 V
-
-
I_O = 1.7 mA; V_CC = 1.4 V
-
-
I_O = 1.9 mA; V_CC = 1.65 V
-
-
I_O = 2.3 mA; V_CC = 2.3 V
-
-
I_O = 3.1 mA; V_CC = 2.3 V
-
-
I_O = 2.7 mA; V_CC = 3.0 V
I_O = 4.0 mA; V_CC = 3.0 V
-
-
-
-
I_I
input leakage current
V_I = GND to 3.6 V; V_CC = 0 V to 3.6 V
-
-
I_OFF
power-off leakage current V_I or V_O = 0 V to 3.6 V; V_CC = 0 V
-
-
∆I_OFF
additional power-off
leakage current
V_I or V_O = 0 V to 3.6 V;
V_CC = 0 V to 0.2 V
-
-
I_CC
∆I_CC
quiescent supply current
additional quiescent supply
current
V_I = GND or V_CC; I_O = 0 A;
V_CC = 0.8 V to 3.6 V
V_I = V_CC − 0.6 V; I_O = 0 A;
V_CC = 3.3 V
-
-
[1] _-
-
Max
Unit
-
V
-
V
-
V
-
V
0.30 × V_CC V
0.35 × V_CC V
0.7
V
0.9
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
0.1
V
0.3 × V_CC V
0.37
V
0.35
V
0.33
V
0.45
V
0.33
V
0.45
V
±0.5
µA
±0.5
µA
±0.6
µA
0.9
µA
50
µA
74AUP1G86_2
Product data sheet
Rev. 02.00 — 16 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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