74AHC1G00 Datasheet, PDF (6/16 Pages) NXP Semiconductors – 2-input NAND gate

Philips Semiconductors
2-input NAND gate
Product specification
74AHC1G00; 74AHCT1G00
DC CHARACTERISTICS
Family 74AHC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
T_amb (°C)
SYMBOL PARAMETER
V_IH
HIGH-level input
voltage
V_IL
LOW-level input
voltage
V_OH
HIGH-level output
voltage
V_OL
LOW-level output
voltage
I_LI
input leakage
current
I_CC
quiescent supply
current
C_I
input capacitance
OTHER
V_I = V_IH or V_IL;
I_O = −50 µA
V_I = V_IH or V_IL;
I_O = −50 µA
V_I = V_IH or V_IL;
I_O = −50 µA
V_I = V_IH or V_IL;
I_O = −4.0 mA
V_I = V_IH or V_IL;
I_O = −8.0 mA
V_I = V_IH or V_IL;
I_O = 50 µA
V_I = V_IH or V_IL;
I_O = 50 µA
V_I = V_IH or V_IL;
I_O = 50 µA
V_I = V_IH or V_IL;
I_O = 4.0 mA
V_I = V_IH or V_IL;
I_O = 8.0 mA
V_I = V_CC or GND
V_I = V_CC or GND;
I_O = 0
V_CC
(V)
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
25
MIN. TYP.
1.5 −
2.1 −
3.85 −
−
−
−
−
−
−
1.9 2.0
2.9 3.0
4.4 4.5
2.58 −
3.94 −
−
0
−
0
−
0
−
−
−
−
−
−
−
−
−
1.5
-40 to +85 -40 to +125 UNIT
MAX. MIN. MAX. MIN. MAX.
−
1.5 −
1.5 −
V
−
2.1 −
2.1 −
V
−
3.85 −
3.85 −
V
0.5 −
0.5 −
0.5 V
0.9 −
0.9 −
0.9 V
1.65 −
1.65 −
1.65 V
−
1.9 −
1.9 −
V
−
2.9 −
2.9 −
V
−
4.4 −
4.4 −
V
−
2.48 −
2.40 −
V
−
3.8 −
3.70 −
V
0.1 −
0.1 −
0.1 V
0.1 −
0.1 −
0.1 V
0.1 −
0.1 −
0.1 V
0.36 −
0.44 −
0.55 V
0.36 −
0.44 −
0.55 V
0.1 −
1.0 −
2.0 µA
1.0 −
10 −
40 µA
10 −
10 −
10 pF
2002 May 27
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