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Z0103 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Triacs
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Philips Semiconductors
Z0103/07/09 series
Triacs
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G−; T2− G−;
Z0103MA/MN/NA/NN Figure 9
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2− G+; Figure 9
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
IL
latching current
VD = 12 V; RL = 30 Ω; T2+ G+; T2− G−; T2− G+;
Z0103MA/MN/NA/NN Figure 7
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2+ G−; Figure 7
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
IH
holding current
IT = 50 mA; Figure 8
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state leakage current
Dynamic characteristics
Figure 6
VD = 12 V; RL = 30 Ω; Tj = 25 °C; Figure 11
VD = VDRM; RL = 3.3 kΩ; Tj = 125 °C; Figure 11
VD = VDRM(max); VR = VRRM(max); Tj = 125 °C
dVD/dt
critical rate of rise of
off-state voltage
VD = 0.67 VDRM(max); Tj = 110 °C; exponential
waveform; gate open; Figure 10
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
dVcom/dt
critical rate of change of
commutating voltage
Z0103MA/MN/NA/NN
VD = 400 V; IT = 1 A; Tj = 110 °C;
dIcom/dt = 0.44 A/ms; gate open
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Min Typ Max Unit
-
-
3
mA
-
-
5
mA
-
-
10 mA
-
-
5
mA
-
-
7
mA
-
-
10 mA
-
-
7
mA
-
-
10 mA
-
-
15 mA
-
-
15 mA
-
-
20 mA
-
-
25 mA
-
-
7
mA
-
-
10 mA
-
-
10 mA
-
1.3 1.6 V
-
-
1.3 V
0.2 -
-
V
-
-
500 µA
10 -
-
V/µs
20 -
-
V/µs
50 -
-
V/µs
0.5 -
-
V/µs
1
-
-
V/µs
2
-
-
V/µs
9397 750 10102
Product data
Rev. 02 — 12 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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