TDA7021T Datasheet, PDF (5/13 Pages) NXP Semiconductors – FM radio circuit for MTS

Philips Semiconductors
FM radio circuit for MTS
Product specification
TDA7021T
AC CHARACTERISTICS (MONO OPERATION)
V_P = 3 V; T_amb = 25 °C; measured in Fig.5; f_rf = 96 MHz modulated with ∆f = ±22,5 kHz; f_m = 1 kHz; EMF = 0,3 mV
(e.m.f. at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless
otherwise specified
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP. MAX. UNIT
Sensitivity (e.m.f.)
for −3 dB limiting
for −3 dB muting
for (S+N)/N = 26 dB
Signal handling (e.m.f.)
Signal-to-noise ratio
Total harmonic distortion
AM suppression of output
voltage
Ripple rejection
Oscillator voltage (r.m.s. value)
Variation of oscillator frequency
with temperature
Selectivity
AFC range
Mute range
Audio bandwidth
AF output voltage
(r.m.s. value)
AF output current
max. d.c. load
max. a.c. load (peak value)
see Fig.3
muting disabled
THD < 10%;
∆f = ± 75 kHz
∆f = ± 22,5 kHz
∆f = ± 75 kHz
EMF
EMF
EMF
EMF
(S+N)/N
THD
THD
ratio of AM signal
(f_m = 1 kHz; m = 80%)
to FM signal (f_m =
1 kHz; ∆f = 75 kHz)
∆V_P = 100 mV;
f = 1 kHz
AMS
RR
V_5-4(rms)
V_P = 1 V
see Fig.9;
no modulation
∆V_o = 3 dB;
measured with 50 µs
pre-emphasis
∆^{--∆--T--f--}_ao^---_ms^---c-_b^-
S₊₃₀₀
S_−300
±∆f_rf
±∆f_rf
B
R_L (pin 14) = 100 Ω
THD = 10%
V_o(rms)
I_o(dc)
I_o(ac)
−
4,0
−
5,0
−
7,0
−
200
−
60
−
0,7
−
2,3
−
50
−
30
−
250
−
5
−
46
−
30
−
160
−
120
−
10
−
90
−100
−
−
3
−
µV
−
µV
−
µV
−
mV
−
dB
−
%
−
%
−
dB
−
dB
−
mV
−
kHz/°C
−
dB
−
dB
−
kHz
−
kHz
−
kHz
−
mV
+100 µA
−
mA
May 1992
5