TDA7010T Datasheet, PDF (5/11 Pages) NXP Semiconductors – FM radio circuit

Philips Semiconductors
FM radio circuit
Product specification
TDA7010T
A.C. CHARACTERISTICS
V_p = 4,5 V; T_amb = 25 °C; measured in Fig.4 (mute switch open, enabled); f_rf = 96 MHz (tuned to max. signal at 5 µV
e.m.f.) modulated with ∆f = ±22,5 kHz; f_m = 1 kHz; EMF = 0,2 mV (e.m.f. voltage at a source impedance of 75 Ω); r.m.s.
noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified.
PARAMETER
Sensitivity (see Fig.3)
(e.m.f. voltage)
for −3 dB limiting;
muting disabled
for −3 dB muting
for S/N = 26 dB
Signal handling (e.m.f. voltage)
for THD < 10%; ∆f = ± 75 kHz
Signal-to-noise ratio
Total harmonic distortion
at ∆f = ± 22,5 kHz
at ∆f = ± 75 kHz
AM suppression of output voltage
(ratio of the AM output signal
referred to the FM output signal)
FM signal: f_m = 1 kHz; ∆f = ± 75 kHz
AM signal: f_m = 1 kHz; m = 80%
Ripple rejection (∆V_P = 100 mV; f = 1 kHz)
Oscillator voltage (r.m.s. value) at pin 5
Variation of oscillator frequency
with supply voltage (∆V_P = 1 V)
Selectivity
A.F.C. range
Audio bandwidth at ∆V_o = 3 dB
measured with pre-emphasis (t = 50 µs)
A.F. output voltage (r.m.s. value)
at R_L = 22 kΩ
Load resistance
at V_P = 4,5 V
at V_P = 9,0 V
SYMBOL
MIN.
TYP.
MAX. UNIT
EMF
EMF
EMF
EMF
S/N
THD
THD
−
1,5
−
µV
−
6
−
µV
−
5,5
−
µV
−
200
−
mV
−
60
−
dB
−
0,7
−
%
−
2,3
−
%
AMS
−
RR
−
V_5-4(rms)
−
∆f_osc
−
S₊₃₀₀
−
S_−300
−
∆f_rf
−
B
−
V_o(rms)
−
R_L
−
R_L
−
50
−
10
−
250
−
60
−
43
−
28
−
± 300
−
10
−
75
−
−
22
−
47
dB
dB
mV
kHz/V
dB
dB
kHz
kHz
mV
kΩ
kΩ
September 1983
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