SI9936DY Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si9936DY
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_GS(th) gate-source threshold voltage
I_D = 250 µA; V_DS = V_GS
I_DSS
drain-source leakage current
I_GSS
gate-source leakage current
V_DS = 24 V; V_GS = 0 V
T_j = 25 °C
T_j = 55 °C
V_GS = ±20 V; V_DS = 0 V
R_DSon drain-source on-state resistance V_GS = 10 V; I_D = 5 A; Figure 7 and 8
V_GS = 4.5 V; I_D = 3.9 A; Figure 7 and 8
Dynamic characteristics
g_fs
forward transconductance
V_DS = 15 V; I_D = 5 A
Q_g(tot) total gate charge
I_D = 5 A; V_DS = 15 V; V_GS = 10 V; Figure 13
Q_gs
Q_gd
t_d(on)
gate-source charge
gate-drain (Miller) charge
turn-on delay time
V_DD = 15 V; R_D = 15 Ω; V_GS = 10 V; R_G = 6 Ω
t_r
turn-on rise time
t_d(off)
turn-off delay time
t_f
turn-off fall time
Source-drain (reverse) diode
V_SD
source-drain (diode forward) voltage I_S = 1.7A; V_GS = 0 V; Figure 12
t_rr
reverse recovery time
I_S = 5 A; dI_S/dt = −100 A/µs; V_GS = 0 V
Min Typ Max Unit
1−−V
− − 2 µA
− − 20 µA
− − 100 nA
− 35 50 mΩ
− 44 80 mΩ
− 11 − S
− 18.5 35 nC
− 1.9 − nC
− 3 − nC
− 11 30 ns
− 9 25 ns
− 25 50 ns
− 10 50 ns
− 0.72 1.2 V
− 60 160 ns
9397 750 08413
Product data
Rev. 01 — 16 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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