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PTB23001X Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN microwave power transistors | |||
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Philips Semiconductors
NPN microwave power transistors
Product speciï¬cation
PTB23001X; PTB23003X;
PTB23005X
CHARACTERISTICS
Tmb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CES
ICBO
IEBO
Ccb
Cce
collector-base breakdown voltage
PTB23001X
IC = 1 mA; IE = 0
PTB23003X
IC = 2 mA; IE = 0
PTB23005X
IC = 3 mA; IE = 0
collector-emitter breakdown voltage IC = 10 mA; RBE = 0 â¦
collector cut-off current
PTB23001X
PTB23003X
PTB23005X
emitter cut-off current
VCE = 24 V; IE = 0
VCE = 24 V; IE = 0
VCE = 24 V; IE = 0
PTB23001X
PTB23003X
PTB23005X
collector-base capacitance
VEB = 1.5 V; IC = 0
VEB = 1.5 V; IC = 0
VEB = 1.5 V; IC = 0
PTB23001X
PTB23003X
PTB23005X
collector-emitter capacitance
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
PTB23001X
PTB23003X
PTB23005X
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
MIN. TYP. MAX. UNIT
40
â
â
V
40
â
â
V
40
â
â
V
40
â
â
V
â
â
10
µA
â
â
20
µA
â
â
30
µA
â
â
0.2 µA
â
â
0.4 µA
â
â
0.6 µA
â
2.2 â
pF
â
3
â
pF
â
3.8 â
pF
â
0.3 â
pF
â
0.6 â
pF
â
0.9 â
pF
APPLICATION INFORMATION
Microwave performance in a common-base class B selective ampliï¬er circuit; see note 1.
MODE OF
OPERATION
TYPE NUMBER
f
(GHz)
VCC
(V)
PL
(W)
Gpo
(dB)
ηC
(%)
PTB23001X
2
Class B (CW) PTB23003X
2
PTB23005X
2
24
>1; typ. 1.8 >7; typ. 9
>45; typ. 50
24
>3; typ. 4
>8.75; typ. 10 >45; typ. 50
24
>5; typ. 7
>9.2; typ. 11 >40; typ. 50
Note
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
1997 Feb 19
5
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