PSMN4R3-80PS Datasheet, PDF (5/8 Pages) NXP Semiconductors – NextPower MOSFETs

30 V NextPower types
Type
PSMN1R0-30YLC
PSMN1R2-30YLC
PSMN1R5-30YLC
PSMN2R2-30YLC
PSMN2R6-30YLC
PSMN3R2-30YLC
PSMN3R7-30YLC
PSMN4R1-30YLC
PSMN4R5-30YLC
Voltage (V)
30
30
30
30
30
30
30
30
30
R_DS(on)typ
V_GS = 4.5 V (mΩ)
1.1
1.35
1.65
2.3
3.1
3.75
4.25
4.75
5.1
Q_G(typ)
V_GS = 4.5 V (nC)
50
38
30
26
18
14.2
14
11
9.6
Q_GD(typ)
V_GS = 4.5 V (nC)
14.6
11.6
8.6
8
5.5
4.1
4.2
3.5
2.85
C_OSS (pF)
1210
977
860
651
549
432
380
316
288
Benchmarking
Comparing NXP NextPower with NXP Trench 6 technology
Benchmark testing for NextPower types shows a 1% efficiency gain compared to equivalent Trench 6 types:
30 V NextPower typ⁼e^&Gs^$3H)"
XYW!
Type
XYW!
IJ0C&4E$F9)
=K,LMN<=)
U5V!
VoltageU(5VX!)
PSMN1R5-30YL
XYW!
30 ^{] !}
XYW!
V5T!
PSMN1R5-30YLC
30
OKC$F9E)
=K,LMN<=)
R_D^UU_S^f\₍^!!_on)typ
V_GS = 4.5 V (mΩ)
f5f₁!_.8
f5\ !
1.65
OKPC$F9E)
=K,LMN<=)
8+,,C$F9E )
V5f!
]!
Q_G(typ)
TVVY!
\VT !
V_GS = 4.5 V (nC)
U5]!
36
bgf !
U5]V!
U]] !
30
Q_GD(typ)
V_GS = 4.5 V (nC)
8.7
8.6
C_OSS (pF)
1082
860
PSMN4R0-30YL
30
3.7
18
4.3
469
PSMN4R5-30YLC
30
5.1
9.6
2.85
288
Test conditions
} Input Voltage: 12 V
} Output Voltage: 1.2 V
} 1 phase
} Frequency: 500 KHz
} Air flow: 200 LFM
NextPower: PSMN4R5-30YLC / PSMN1R5-30YLC
Trench 6: PSMN4R0-30YL / PSMN1R5-30YL
0
5
10
15
20
25
30
I_LOAD (Amps)
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
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