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PMLL4150 Datasheet, PDF (5/9 Pages) NXP Semiconductors – High-speed diodes
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Philips Semiconductors
High-speed diodes
Product specification
PMLL4150; PMLL4151; PMLL4153
SYMBOL
PARAMETER
trr
reverse recovery time
PMLL4150
trr
reverse recovery time
PMLL4151
trr
reverse recovery time
PMLL4153
tfr
forward recovery time
CONDITIONS
when switched from IF = 10 mA to
IR = 1 mA; RL = 100 Ω; measured at
IR = 0.1 mA; see Fig.7
when switched from IF = 10 mA to
200 mA to IR = 10 mA to 200 mA;
RL = 100 Ω; measured at IR = 0.1 × IF;
see Fig.7
when switched from IF = 200 mA to
400 mA to IR = 200 mA to 400 mA;
RL = 100 Ω; measured at IR = 0.1 × IF;
see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched to IF = 200 mA; tr = 0.4 ns;
measured at VF = 1 V; see Fig.8
MIN.
−
−
−
−
−
−
−
−
MAX. UNIT
6 ns
4 ns
6 ns
4 ns
2 ns
4 ns
2 ns
10 ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
300
350
UNIT
K/W
K/W
1996 Sep 18
5
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