PMEG2005CT_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – 500 mA low VF dual MEGA Schottky barrier rectifier

NXP Semiconductors
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02 0.01
0
PMEG2005CT
500 mA low V_F dual MEGA Schottky barrier rectifier
006aab535
1
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per device
V_F
forward voltage
I_F = 0.1 mA
-
95
I_F = 1 mA
-
155
I_F = 10 mA
-
215
I_F = 100 mA
-
285
I_F = 500 mA
-
360
I_R
reverse current
V_R = 10 V
-
11
V_R = 20 V
-
30
C_d
diode capacitance
V_R = 1 V; f = 1 MHz
-
66
t_rr
reverse recovery time
[1] _-
22
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
130
190
240
330
390
40
200
80
-
Unit
mV
mV
mV
mV
mV
μA
μA
pF
ns
PMEG2005CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 June 2010
© NXP B.V. 2010. All rights reserved.
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