PMBD6050 Datasheet, PDF (5/12 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
PMBD6050
handbook¹, ⁰ha²lfpage
IR
(µA)
10
(1)
(2)
(3)
1
MBG379
10 ¹
10 ²
0
100
Tj (^oC)
200
(1) V_R = 50 V; maximum values.
(2) V_R = 50 V; typical values.
(3) V_R = 30 V; typical values.
Fig.5 Reverse current as a function of junction
temperature.
0.8
handbook, halfpage
Cd
(pF)
0.6
MBG446
0.4
0.2
0
0
4
8
12 _{VR (V)} 16
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 11
5