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PESD5ZX Datasheet, PDF (5/17 Pages) NXP Semiconductors – Low capacitance unidirectional ESD protection diodes
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NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per diode
VRWM
reverse standoff voltage
PESD5Z2.5
-
-
PESD5Z3.3
-
-
PESD5Z5.0
-
-
PESD5Z6.0
-
-
PESD5Z7.0
-
-
PESD5Z12
-
-
IRM
reverse leakage current
PESD5Z2.5
VRWM = 2.5 V
PESD5Z3.3
VRWM = 3.3 V
PESD5Z5.0
VRWM = 5.0 V
PESD5Z6.0
VRWM = 6.0 V
PESD5Z7.0
VRWM = 7.0 V
PESD5Z12
VRWM = 12.0 V
VBR
breakdown voltage
IR = 1 mA
PESD5Z2.5
-
0.5
-
8
-
5
-
2
-
<1
-
<1
4
-
PESD5Z3.3
5
-
PESD5Z5.0
6.2 -
PESD5Z6.0
6.8 -
PESD5Z7.0
7.5 -
PESD5Z12
14.1 -
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD5Z2.5
-
229
PESD5Z3.3
-
172
PESD5Z5.0
-
89
PESD5Z6.0
-
78
PESD5Z7.0
-
69
PESD5Z12
-
35
VCL
clamping voltage
PESD5Z2.5
IPP = 5 A
[1][2]
-
8
PESD5Z3.3
-
8
PESD5Z5.0
-
12
PESD5Z6.0
-
12
PESD5Z7.0
-
14
PESD5Z12
-
27
Max Unit
2.5 V
3.3 V
5.0 V
6.0 V
7.0 V
12.0 V
6
µA
50
nA
50
nA
10
nA
10
nA
10
nA
-
V
-
V
-
V
-
V
-
V
-
V
300 pF
200 pF
150 pF
150 pF
150 pF
75
pF
9
V
10
V
13
V
13
V
15
V
30
V
PESD5ZX_SER_2
Product data sheet
Rev. 02 — 4 April 2008
© NXP B.V. 2008. All rights reserved.
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