PDTC144WE-115 Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors R1 = 47 kΩ, R2 = 22 kΩ

NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Product data sheet
PDTC144W series
THERMAL CHARACTERISTICS
SYMBOL
R_th(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
CONDITIONS
in free air
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
VALUE
250
500
500
625
500
500
833
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
R-----2--
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
V_CB = 50 V; I_E = 0 A
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A; T_j = 150 °C
V_EB = 5 V; I_C = 0 A
V_CE = 5 V; I_C = 5 mA
I_C = 10 mA; I_B = 0.5 mA
I_C = 100 μA; V_CE = 5 V
I_C = 2 mA; V_CE = 0.3 V
resistor ratio
C_c
collector capacitance
I_E = i_e = 0 A; V_CB = 10 V;
f = 1 MHz
MIN.
−
−
−
−
60
−
−
4
33
0.37
TYP.
−
−
−
−
−
−
1.7
2.7
47
0.47
MAX. UNIT
100 nA
1
μA
50
μA
110 μA
−
150 mV
1.2 V
−
V
61
kΩ
0.57
−
−
2.5 pF
2004 Aug 17
5