PDTA144T Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 47 kW-ohm, R2 = open

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = open
Product specification
PDTA144T series
THERMAL CHARACTERISTICS
SYMBOL
R_th(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
500
250
625
500
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
R1
C_c
collector-base cut-off current
V_CB = −50 V; I_E = 0 A
−
−
collector-emitter cut-off current
V_CE = −30 V; I_B = 0 A
−
−
V_CE = −30 V; I_B = 0; T_j = 150 °C −
−
emitter-base cut-off current
V_EB = −5 V; I_C = 0 A
−
−
DC current gain
V_CE = −5 V; I_C = −1 mA
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
100 −
−
−
input resistor
33
47
collector capacitance
I_E = i_e = 0; V_CB = −10 V;
f = 1 MHz
−
−
−100 nA
−1
µA
−50 µA
−100 nA
−
−150 mV
61
kΩ
3
pF
2004 Aug 05
5