PDTA144E Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
Product specification
PDTA144E series
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector-base cut-off current
V_CB = −50 V; I_E = 0
−
collector-emitter cut-off current
V_CE = −30 V; I_B = 0
−
V_CE = −30 V; I_B = 0; T_j = 150 °C −
emitter-base cut-off current
V_EB = −5 V; I_C = 0
−
DC current gain
V_CE = −5 V; I_C = −5 mA
80
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
input-off voltage
I_C = −100 µA; V_CE = −5 V
−
input-on voltage
I_C = −2 mA; V_CE = −0.3 V
−3
input resistor
33
−
−100 nA
−
−1
µA
−
−50 µA
−
−90 µA
−
−
−
−150 mV
−1.2 −0.8 V
−1.6 −
V
47
61
kΩ
RR-----21--
resistor ratio
0.8 1
1.2
C_c
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
3
pF
2004 Aug 05
5