PBSS8110Y_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS8110Y
100 V, 1 A NPN low V_CEsat (BISS) transistor
10³
Z_th
(K/W) ⁽¹⁾
(2)
10^{2 (3)}
(4)
(5)
(6)
10 (7)
(8)
(9)
1
(10)
001aaa797
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
Mounted on FR4 PCB; mounting pad for collector = 1cm²
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance as a function of pulse time; typical values
10²
10³
t_p (s)
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = 80 V; I_E = 0 A
current
V_CB = 80 V; I_E = 0 A;
T_j = 150 °C
I_CES
collector-emitter
V_CE = 80 V; V_BE = 0 V
cut-off current
I_EBO
emitter-base cut-off V_EB = 4 V; I_C = 0 A
current
h_FE
DC current gain
V_CE = 10 V; I_C = 1 mA
V_CE = 10 V; I_C = 250 mA
V_CE = 10 V; I_C = 0.5 A
V_CE = 10 V; I_C = 1 A
Min
Typ
Max
Unit
-
-
100
nA
-
-
50
μA
-
-
100
nA
-
-
100
nA
150
-
-
150
-
500
[1] ₁₀₀
-
-
[1] ₈₀
-
-
PBSS8110Y_2
Product data sheet
Rev. 02 — 21 November 2009
© NXP B.V. 2009. All rights reserved.
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