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PBSS5160DS Datasheet, PDF (5/14 Pages) NXP Semiconductors – 60 V, 1 A PNP low VCEsat (BISS) transistor
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Philips Semiconductors
PBSS5160DS
60 V, 1 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10 0.02
0.01
006aaa495
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10
0.02
0.01
006aaa496
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 15186
Product data sheet
Rev. 02 — 28 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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