PBSS4240DPN_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – 40 V low VCEsat NPN/PNP transistor

NXP Semiconductors
40 V low V_CEsat NPN/PNP transistor
Product data sheet
PBSS4240DPN
800
handbook, halfpage
hFE
(1)
600
(2)
400
(3)
200
MHC471
0
10^−1
1
10
TR1 (NPN); V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
1.2
handbook, halfpage
VBE
(V)
0.8
0.4
MHC472
(1)
(2)
(3)
0
10^−1
1
10
TR1 (NPN); V_CE = 5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10²
10³
10⁴
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10³
handbook, halfpage
VCEsat
(mV)
MHC473
10²
(1)
(2)
(3)
10
10^−1
1
10
TR1 (NPN); I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10²
10³
10⁴
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1.2
handbook, halfpage
VBEsat
(V)
1
(1)
0.8
(2)
0.6
(3)
0.4
MHC474
0.2
10^−1
1
10
TR1 (NPN); I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10²
10³
10⁴
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20
5