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PBSS4140DPN Datasheet, PDF (5/12 Pages) NXP Semiconductors – 40 V low VCEsat NPN/PNP transistor
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Philips Semiconductors
40 V low VCEsat NPN/PNP transistor
Product specification
PBSS4140DPN
1000
handbook, halfpage
hFE
800
600
400
200
MLD642
(1)
(2)
(3)
010−1
1
10
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
102
103
104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
10
handbook, halfpage
VBE
(V)
1
MLD635
(1)
(2)
(3)
10−1
10−1
1
10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
102
103
104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
MLD636
(1)
102
handbook, halfpage
RCEsat
(Ω)
10
MHC126
(2)
(3)
10
1
1
10
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
102
103
104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1
(1)
10−1
10−1
1
10
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2)
(3)
102
103
104
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2001 Dec 13
5
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