PBLS4003Y Datasheet, PDF (5/11 Pages) NXP Semiconductors – 40 V PNP BISS loadswitch

Philips Semiconductors
PBLS4003Y; PBLS4003V
40 V PNP BISS loadswitch
600
h_FE
400
200
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(1)
(2)
(3)
−1
V_CEsat
(mV)
−10^−1
(1)
(2)
(3)
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0
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 1. TR1 (PNP): DC current gain as a function of
collector current; typical values
−1100
V_BE
(mV)
−900
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(1)
−700
(2)
(3)
−500
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 2. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
−1.1
V_BEsat
(V)
−0.9
−0.7
−0.5
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(1)
(2)
(3)
−300
−0.3
−100
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
−0.1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. TR1 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
9397 750 15222
Product data sheet
Rev. 02 — 14 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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