IRF530N Datasheet, PDF (5/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF530N
Source-Drain Diode Current, IF (A)
20
VGS = 0 V
18
16
14
12
175 C
10
8
Tj = 25 C
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.13. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
Maximum Avalanche Current, IAS (A)
100
10
25 C
1
Tj prior to avalanche = 150 C
0.1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.14. Maximum permissible non-repetitive
avalanche current (I_AS) versus avalanche time (t_AV);
unclamped inductive load
August 1999
5
Rev 1.100