BYM359DX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Dual diode fast, high-voltage

Philips Semiconductors
Dual diode
fast, high-voltage
Product specification
BYM359DX
IFS(RMS) / A
80
BY359
70
IFSM
60
50
40
30
20
10
0
1ms
10ms
0.1s
1s
10s
tp / s
Fig.11. Damper maximum non-repetitive rms forward
current. I_F = f(t_p); sinusoidal current waveform;
T_j = 150˚C prior to surge with reapplied V_RWM.
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
1
0.1
0.01
P_D
tp
D=
tp
T
0.001
1us
Fig.12.
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BY359
Damper transient thermal impedance
Z_th = f(t_p)
IF / A
30
Tj=150C
Tj=25C
20
BY359
10
typ
max
0
0
1.0
2.0
VF / V
Fig.13. Damper forward characteristic I_F = f(V_F);
parameter T_j
March 2000
5
Rev 1.000