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BYC20DX-600P_15 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC20DX-600P
Hyperfast power diode
Symbol
Parameter
Conditions
IF = 20 A; Tj = 150 °C; Fig. 5
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 20 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 6
IF = 20 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 6
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 6
IF = 20 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 6
IF = 20 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 6
IF = 20 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 6
IRM
peak reverse recovery IF = 20 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 6
IF = 20 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 6
Min Typ Max Unit
-
1.2 1.97 V
-
-
10
µA
-
-
1
mA
-
47
-
nC
-
193 -
nC
-
16
20
ns
-
26
-
ns
-
33
-
ns
-
51
-
ns
-
2.8 -
A
-
7.6 -
A
40
IF
(A)
30
aaa-010047
IF
dlF
dt
trr
20
(1)
(2)
(3)
10
0
0
1
2
3
4
VF (V)
Fig. 5. Forward current as a function of forward
voltage
time
25 %
Qr
100 %
IR
IRM
003aac562
Fig. 6. Reverse recovery definitions; ramp recovery
BYC20DX-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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