English
Language : 

BYC15-600P_15 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Hyperfast power diode
◁
NXP Semiconductors
BYC15-600P
Hyperfast power diode
Symbol
trr
IRM
30
IF
(A)
20
10
Parameter
Conditions
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 15 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 7
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
peak reverse recovery IF = 15 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 7
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
aaa-010688
IF
dlF
dt
Min Typ Max Unit
-
13
18
ns
-
22
-
ns
-
28
-
ns
-
39
-
ns
-
2.1 -
A
-
5.8 -
A
(1)
(2)
(3)
trr
Qr
time
25 %
100 %
0
0
1
2
3
4
VF (V)
Fig. 6. Forward current as a function of forward
voltage
IR
IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC15-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
5/9
 ▷