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BYC10-600P_15 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC10-600P
Hyperfast power diode
Symbol
trr
IRM
Parameter
Conditions
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
peak reverse recovery IF = 10 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
Min Typ Max Unit
-
12
18
ns
-
19
-
ns
-
26
-
ns
-
34
-
ns
-
2
-
A
-
4.8 -
A
20
IF
(A)
15
aaa-010185
IF
dlF
dt
trr
10
(1)
(2)
(3)
5
0
0
1
2
3
4
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr
100 %
IR
IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC10-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
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