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BUK9Y113-100E_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
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NXP Semiconductors
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
0.02
single shot
003aaj113
P
tp
δ= T
10-2
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11
VGS = 5 V; ID = 5 A; Tj = 175 °C;
Fig. 12; Fig. 11
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 5 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
QGD
gate-drain charge
BUK9Y113-100E
All information provided in this document is subject to legal disclaimers.
Product data sheet
8 May 2013
Min Typ Max Unit
100 -
-
V
90
-
-
V
1.4 1.7 2.1 V
-
-
2.45 V
0.5 -
-
V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
97
113 mΩ
-
93
110 mΩ
-
-
312 mΩ
-
8.4 -
nC
-
1.7 -
nC
-
3.9 -
nC
© NXP B.V. 2013. All rights reserved
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