English
Language : 

BUK7E3R5-60E_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
◁
NXP Semiconductors
BUK7E3R5-60E
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
LD
internal drain
from upper edge of mounting base to
inductance
centre of die ; Tj = 25 °C
Tj = 25 °C; from drain lead 6mm from
package to centre of die
LS
BUK7E3R5-60E
internal source
inductance
measured from source lead to source
bond pad ; Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
Product data sheet
11 September 2012
Min Typ Max Unit
60
-
-
V
54
-
-
V
2.4 3
4
V
1
-
-
V
-
-
4.5 V
-
0.09 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
2.6 3.5 mΩ
-
-
7.6 mΩ
-
114 -
nC
-
24.6 -
nC
-
34.8 -
nC
-
6685 8920 pF
-
851 1025 pF
-
502 690 pF
-
28
-
ns
-
45
-
ns
-
68
-
ns
-
49
-
ns
-
2.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
© NXP B.V. 2012. All rights reserved
5 / 12
 ▷