BUK7535-55A Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7535-55A; BUK7635-55A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V_(BR)DSS drain-source breakdown
I_D = 0.25 mA; V_GS = 0 V
voltage
T_j = 25 °C
55
−
−
V
T_j = −55 °C
50
−
−
V
V_GS(th)
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 20 A;
Figure 7 and 8
2
3
4
V
1
−
−
V
−
−
4.4
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
Dynamic characteristics
T_j = 25 °C
T_j = 175 °C
−
30
35
mΩ
−
−
70
mΩ
C_iss
input capacitance
V_GS = 0 V; V_DS = 25 V;
−
C_oss
output capacitance
f = 1 MHz; Figure 12
−
C_rss
reverse transfer capacitance
−
t_d(on)
t_r
turn-on delay time
rise time
V_DD = 30 V; R_L = 1.2 Ω;
−
V_GS = 10 V; R_G = 10 Ω;
−
t_d(off)
turn-off delay time
−
t_f
fall time
−
L_d
internal drain inductance
from drain lead 6 mm from
−
package to centre of die
650
872
pF
170
205
pF
110
153
pF
10
−
ns
62
−
ns
24
−
ns
20
−
ns
4.5
−
nH
from contact screw on
−
3.5
−
nH
mounting base to centre of
die SOT78
from upper edge of drain
−
2.5
−
nH
mounting base to centre of
die SOT404
L_s
internal source inductance from source lead to source
−
7.5
−
nH
bond pad
9397 750 07646
Product specification
Rev. 01 — 10 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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