BUK7277-55A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7277-55A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Static characteristics
V_(BR)DSS drain-source breakdown voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain-source leakage current
I_GSS
R_DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
t_d(off)
rise time
turn-off delay time
t_f
fall time
L_d
internal drain inductance
L_s
internal source inductance
Conditions
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; Figure 9
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 10 A; Figure 7 and 8
T_j = 25 °C
T_j = 175 °C
V_GS = 0 V; V_DS = 25 V; f = 1 MHz; Figure 12
V_DD = 30 V; R_L = 1.2 Ω; V_GS = 10 V; R_G = 10 Ω
measured from drain lead from package to
centre of die
measured from source lead from package to
source bond pad
Min Typ Max Unit
55 − − V
50 − − V
234V
1−−V
− − 4.4 V
− 0.05 10 µA
− − 500 µA
− 2 100 nA
− 65 77 mΩ
− − 154 mΩ
− 316 422 pF
− 92 110 pF
− 64 87 pF
− 10 − ns
− 50 − ns
− 70 − ns
− 40 − ns
− 2.5 − nH
− 7.5 − nH
9397 750 07698
Product specification
Rev. 01 — 1 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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