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BUK7207-30B Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS standard level FET
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Philips Semiconductors
BUK7207-30B
TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
30
Tj = −55 °C
27
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C
2
Tj = 185 °C
0.9
Tj = −55 °C
-
IDSS
drain-source leakage current VDS = 30 V; VGS = 0 V
Tj = 25 °C
-
Tj = 185 °C
-
IGSS
gate-source leakage current VGS = ±20 V; VDS = 0 V
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Tj = 25 °C
-
Tj = 185 °C
-
Dynamic characteristics
Qg(tot)
total gate charge
VGS = 10 V; VDS = 24 V;
-
Qgs
gate-source charge
ID = 25 A; Figure 14
-
Qgd
gate-drain (Miller) charge
-
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
Coss
output capacitance
f = 1 MHz; Figure 12
-
Crss
reverse transfer capacitance
-
td(on)
tr
turn-on delay time
rise time
VDS = 25 V; RL = 1.2 Ω;
-
VGS = 10 V; RG = 10 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Ld
internal drain inductance
measured from drain to
-
center of die
Ls
internal source inductance measured from source lead
-
to source bond pad
Source-drain diode
VSD
source-drain (diode forward) IS = 20 A; VGS = 0 V;
-
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
-
Qr
recovered charge
VGS = −10 V; VDS = 25 V
-
Typ
Max
Unit
-
-
V
-
-
V
3
4
V
-
-
V
-
4.4
V
0.02
1
µA
-
500
µA
2
100
nA
5.9
7
mΩ
-
13.3
mΩ
34
-
nC
8
-
nC
10
-
nC
1 684
2 245
pF
625
750
pF
249
341
pF
14
-
nS
85
-
nS
55
-
nS
76
-
nS
2.5
-
nH
7.5
-
nH
0.85
1.2
V
43
-
ns
20
-
nC
9397 750 12227
Product data
Rev. 02 — 22 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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