BUK456-100A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK456-100A/B
VGS / V
12
10
BUK456-100
VDS / V =20
8
80
6
4
2
0
0
20
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 34 A; parameter V_DS
IF / A
70
BUK456-100A
60
50
40
Tj / C = 150
25
30
20
10
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
April 1998
5
Rev 1.100