BUK446-800A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK446-800A/B
12 ^{VGS / V}
10
BUK4y6-800
VDS / V =160
8
640
6
4
2
0
0
20
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 4 A; parameter V_DS
IF / A
10
BUK4y6-800A
Tj / C = 150
25
5
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
May 1995
5
Rev 1.200