BUK438W-800A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK438W-800A/B
VGS / V
12
10
8
VDS / V = 160
640
6
4
2
0
0
20
40
60
80
100
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 7.6 A; parameter V_DS
20 ^{IF / A}
BUK4y8-800
15
Tj / C = 150
10
25
5
0
0
0.2 0.4 0.6 0.8
1
1.2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
February 1998
5
Rev 1.000