BUK436W-200A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK436W-200A/B
VGS / V
12
10
BUK456-200
VDS / V =40
8
160
6
4
2
0
0
10
20
30
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 19 A; parameter V_DS
IF / A
40
BUK456-200A
30
Tj / C = 150
25
20
10
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
July 1997
5
Rev 1.000