BUJ101AU Datasheet, PDF (5/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ101AU
tsi (us)
1.25
1
0.75
IC = 2A
IC = 1.5A
0.5
IC = 1A
0.25
0
2
4
6
8
10
11
HFE GAIN (IC/IB)
Fig.13. Inductive switching.
tsi = f(h_FE)
tsi (us)
1.25
1
0.75
IC/IB = 3
0.5
0.25
IC/IB = 5
IC/IB = 10
0
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC COLLECTOR CURRENT /A
Fig.14. Inductive switching.
tsi = f(I_C)
RESISTIVE SWITCHING
VCC
90 %
ICon
90 %
VIM
RB
0
tp
T
RL
T.U.T.
Fig.15. Test circuit resistive load. V_IM = -6 to +8 V
V_CC = 250 V; t_p = 20 µs; δ = t_p / T = 0.01.
R_B and R_L calculated from I_Con and I_Bon requirements.
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.16. Switching times waveforms with resistive load.
ton (us)
2
1.5
IC/IB = 10
1
IC/IB = 5
0.5
IC/IB = 3
0
0
0.5
1
1.5
2
IC COLLECTOR CURRENT (A)
Fig.17. Resistive switching.
ton = f(I_C)
ts (us)
3
2.5
2
IC/IB = 5
1.5
IC/IB = 3
1
0.5
IC/IB = 10
0
0
0.5
1
1.5
2
2.5
IC COLLECTOR CURRENT (A)
Fig.18. Resistive switching.
ts = f(I_C)
September 1999
5
Rev 1.000