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| BU508DW Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DW
Fig.10. Forward bias safe operating area. Ths < 25ËC
(1) Ptot max line.
(2) Second-breakdown limits (independent of
temperature).
I Region of permissible DC operation.
II Permissible extension for repetitive pulse
operation.
July 1998
5
Rev 1.200
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