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BU4507AZ Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor
Philips Semiconductors
Silicon Diffused Power Transistor
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Product specification
BU4507AZ
Zth K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
BU4507AZ
0.01
PD
tp
D
=
tp
T
0
0.001
1.0E-07
1.0E-05
1.0E-3
t/s
T
t
1.0E-01
1.0E+01
Fig.14. Transient thermal impedance.
August 1998
5
Rev 1.100