BU2708AX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708AX
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T_hs)
Zth / K/W
10
BU2708AF/DF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D= 0
0.001
1.0E-06
T
1E-04
1E-02
tp / sec
t
1E+00
Fig.14. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.15. Test Circuit RBSOA. V_CC = 150 V;
-V_BB = 1 - 4 V;
L_C = 1 mH; V_CL = 1500 V; L_B = 1 - 3 µH;
C_FB = 1 - 4 nF; I_B(end) = 0.8 - 4 A
IC / A
16
BU2708AF/DF
14
12
Area where
Fails occur
10
8
6
4
2
0
100
VCE / V
1000
1700
Fig.16. Reverse bias safe operating area. T_j ≤ T_jmax
September 1997
5
Rev 1.100