BU2525AW Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
IC / A
100
ICM
ICDC
10
= 0.01
Ptot
1
BU2525A
tp =
40 us
100 us
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.15. Forward bias safe operating area. T_mb = 25 ˚C
I_CDC & I_CM = f(V_CE); I_CM single pulse; parameter t_p;
Second-breakdown limits independant of temperature.
Product specification
BU2525AW
September 1997
5
Rev 1.100