BU2522DX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522DX
10 ^{Zth / (K/W)}
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D = ^tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.13. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
IC / A
30
BU2522AF
20
10
0
0
500
1000
1500
VCE / V
Fig.14. Reverse bias safe operating area. T_j ≤ T_jmax
IC / A
100
ICM
ICDC
10
= 0.01
BU2520AF
tp =
30 us
100 us
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.15. Forward bias safe operating area. T_hs = 25 ˚C
I_CDC & I_CM = f(V_CE); I_CM single pulse; parameter t_p
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200