BU2508D Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
IC / A
100
ICM max
10 ^{IC max}
(1)
I
1
0.1
= 0.01
tp =
5 us
II
10
20
50
100
200
500
1 ms
(2)
2
5
10
20
DC
0.01
1
10
100
1000
VCE / V
Fig.13. Forward bias safe operating area. T_mb = 25˚C
(1) P_tot max line.
(2) Second-breakdown limits
(independent of temperature).
I Region of DC operation.
II Extension for repetitive pulse operation.
Product specification
BU2508D
December 1995
5
Rev 1.200