BSH102 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode MOS transistor

Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH102
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)DSS
V_GSth
I_DSS
I_GSS
R_DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
Q_G
total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
Switching times
t_d(on)
turn-on delay time
t_f
fall time
t_on
turn-on switching time
t_d(off)
turn-off delay time
t_r
rise time
t_off
turn-off switching time
Source-drain diode
V_SD
source-drain diode forward
voltage
t_rr
reverse recovery time
CONDITIONS
V_GS = 0; I_D = 10 µA
V_GS = V_DS; I_D = 1 mA
V_GS = 0; V_DS = 24 V
V_GS = ±20 V; V_DS = 0
V_GS = 10 V; I_D = 0.5 A
V_GS = 4.5 V; I_D = 0.25 A
V_GS = 0; V_DS = 24 V; f = 1 MHz
V_GS = 0; V_DS = 24 V; f = 1 MHz
V_GS = 0; V_DS = 24 V; f = 1 MHz
V_GS = 10 V; V_DD = 15 V;
I_D = 0.5 A; T_amb = 25 °C
V_DD = 15 V; I_D = 0.5 A;
T_amb = 25 °C
V_DD = 15 V; I_D = 0.5 A;
T_amb = 25 °C
V_GS = 0 to 10 V; V_DD = 15 V;
I_D = 0.5 A; R_gen = 6 Ω
V_GS = 0 to 10 V; V_DD = 15 V;
I_D = 0.5 A; R_gen = 6 Ω
V_GS = 0 to 10 V; V_DD = 15 V;
I_D = 0.5 A; R_gen = 6 Ω
V_GS = 10 to 0 V; V_DD = 15 V;
I_D = 0.5 A; R_gen = 6 Ω
V_GS = 10 to 0 V; V_DD = 15 V;
I_D = 0.5 A; R_gen = 6 Ω
V_GS = 10 to 0 V; V_DD = 15 V;
I_D = 0.5 A; R_gen = 6 Ω
V_GD = 0; I_S = 0.5 A
I_S = 0.5 A; di/dt = −100 A/µs
MIN.
30
1
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
67
27
13
2290
MAX.
−
−
100
±100
0.4
0.6
−
−
−
−
UNIT
V
V
nA
nA
Ω
Ω
pF
pF
pF
pC
−
150 −
pC
−
780 −
pC
−
3.5
−
ns
−
4
−
ns
−
7.5
−
ns
−
8
−
ns
−
3
−
ns
−
11
−
ns
−
−
1
V
−
25
−
ns
1997 Dec 08
5