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| BLW32 Datasheet, PDF (5/12 Pages) NXP Semiconductors – UHF linear power transistor | |||
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Philips Semiconductors
UHF linear power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed
Collector-emitter breakdown voltage
VBE = 0; IC = 2 mA
open base; IC = 15 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE = 30 V
VBE = 0; VCE = 30 V; Tj = 175 °C
D.C. current gain (1)
IC = 150 mA; VCE = 25 V
IC = 150 mA; VCE = 25 V; Tj = 175 °C
Collector-emitter saturation voltage (1)
IC = 300 mA; IB = 30 mA
Transition frequency at f = 500 MHz (2)
âIE = 150 mA; VCB = 25 V
âIE = 300 mA; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
IC = 10 mA; VCE = 25 V
Collector-stud capacitance
Notes
1. Measured under pulse conditions: tp ⤠300 µs; δ ⤠0,02.
2. Measured under pulse conditions: tp ⤠50 µs; δ ⤠0,01.
Product speciï¬cation
BLW32
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
ICES
hFE
hFE
VCEsat
fT
fT
Cc
Cre
Ccs
>
50 V
>
30 V
>
4V
<
0,5 mA
<
1,2 mA
>
20
typ. 40
< 120
typ. 500 mV
typ. 3,5 GHz
typ. 3,4 GHz
typ. 3,7 pF
typ. 1,9 pF
typ. 1,2 pF
August 1986
5
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