BLV935 Datasheet, PDF (5/12 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BLV935
APPLICATION INFORMATION
RF performance at T_h = 25 °C in a common emitter, class-AB test circuit; R_{th mb-h} = 0.3 K/W.
MODE OF OPERATION
f
(MHz)
V_CE
(V)
I_CQ
(mA)
P_L
(W)
G_p
(dB)
CW, class-AB
960
26
100
30
≥9
typ. 10
η_C
(%)
≥55
typ. 60
Ruggedness in class-AB operation
The BLV935 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated
output power, under the following conditions: V_CE = 26 V; f = 960 MHz; I_CQ = 100 mA; T_h = 25 °C; R_{th mb-h} = 0.3 K/W.
16
handbook, halfpage
Gp
(dB)
12
8
MLD142
80
η
η
(%)
60
Gp
40
4
20
0
0
0
10
20
30
40
50
P _L (W)
V_CE = 26 V.
I_CQ = 100 mA.
f = 960 MHz.
Fig.6 Power gain and efficiency as functions of
load power; typical values.
50
handbook, halfpage
PL
(W)
40
MLD143
30
20
10
0
0
2
4
6
8
10
P _i (W)
V_CE = 26 V.
I_CQ = 100 mA.
f = 960 MHz.
Fig.7 Load power as a function of input power;
typical values.
1995 Jun 29
5