BLF7G27L-200PB_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors

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BLF7G27L-200PB
Power LDMOS transistor
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V_DS = 32 V; I_Dq = 1700 mA; PAR = 7.2 dB at 0.01 
probability on the CCDF.
(1) G_p; f = 2620 MHz
(2) G_p; f = 2650 MHz
(3) G_p; f = 2690 MHz
(4) _D; f = 2620 MHz
(5) _D; f = 2650 MHz
(6) _D; f = 2690 MHz
Fig 4. Power gain and drain efficiency as function of
average load power; typical values







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V_DS = 32 V; I_Dq = 1700 mA; PAR = 7.2 dB at 0.01 
probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 5. Peak-to-average power ratio as a function of
peak power; typical values

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V_DS = 32 V; I_Dq = 1700 mA; PAR = 7.2 dB at 0.01  probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 6. Adjacent power channel ratio (5 MHz) as a function of average load power; typical values
BLF7G27L-200PB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 February 2012
© NXP B.V. 2012. All rights reserved.
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